IRGP4068DPbF
IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching applications
• High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
| | Parameter | Max | Units |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 96 | A |
| IC @ TC = 100°C | Continuous Collector Current | 48 | A |
| ICM | Pulse Collector Current | 192 | A |
| ILM | Clamped Inductive Load Current | 192 | A |
| IF @ TC = 160°C | Diode Continous Forward Current | 8.0 | A |
| IFSM | Diode Non Repetitive Peak Surge Current @ TJ = 25°C | 175 | A |
| IFM | Diode Peak Repetitive Forward Current | 16 | A |
| VGE | Continuous Gate-to-Emitter Voltage | ±20 | V |
| Transient Gate-to-Emitter Voltage | ±30 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 330 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 170 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | °C |
| | Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C |
| | Mounting Torque, 6-32 or M3 Screw | 10 lbf·in (1.1 N·m) | |
Stock Offer (Hot Sell)
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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR Images
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